Q62702-C311-V2

PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 338 (NPN) q 2 3 1 Type BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328 BC 328-16 BC 328-25 BC 328-40 Marking – Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 Pin Configuration 1 2 3 C B E Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 327 BC 328 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 327 45 50 5 BC 328 25 30 800 1 100 200 625 150 Unit V mA A mA mW ˚C – 65 … + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 327 BC 328 Collector-base breakdown voltage IC = 100 µA BC 327 BC 328 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C...