KSC5504DT Datasheet

KSC5504DT NPN Triple Diffused Planar Silicon Transistor

KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D2-PAK or TO-220 B Equivalent Circuit C 1.

Features

cteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds Rating 1.65 62.5 270 °C Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5504D/KSC5504DT Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=500µA, I.