KSC5502DT

KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor July 2014 KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor Features High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 Equivalent Circuit C B D-PAK 1 TO-220 4 4 E1 1.Base 2,4.Collector 3.Emitter Ordering Information Part Number KSC5502DTM KSC5502DTTU Top Mark C5502D C5502D Package TO-252 3L (DPAK) TO-220 3L Packing Method Tape and Reel Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO VCEO VEBO IC ICP IB IBP TJ TSTG EAS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)(1) Base Current (DC) Base Current (Pulse)(1) Junction Temperature Storage Temperature Range Avalanche Energy (TJ = 25°C) 1200 600 12 2 4 1 2 150 -65 to 150 2.5 V V V A A A A °C °C mJ Note: 1. Pulse test: Pulse width = 5 ms,...