BUL45G Datasheet

BUL45G NPN Silicon Power Transistor

BUL45G NPN Silicon Power Transistor High Voltage Switch-mode Series Designed for use in electronic ballast (light ballast) and in switch-mode power supplies up to 50 W. Features  Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On--.

Features

 Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On--State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A
 Full Characterization at 125C
 Tight Parametric Distributions Consistent Lot--to--Lot
 These Devices are Pb--Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector--Emitter Sustaining Voltage Collector--Base Breakdown Voltage Emitter--Base Voltage Collector Current -- Continuous -- Peak (Note 1) Base Current Total Device Dissipation @ TC =.