BUL45

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL45/D Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE ™ Data Sheet BUL45 * BUL45F* *Motorola Preferred Device t Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain hFE) — Low Power Losses (On–State and Switching Operations) — Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ) — Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A Full Characterization at 125°C Tight Parametric Distributions Consistent Lot–to–Lot BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Operating and Storage Temperature Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB VISOL — — — 75 0.6 BUL45 400 700 9.0 5.0 10 2.0 4500 3500 1500 35 0.28 BUL45F Unit Vdc Vdc Vdc Adc Adc Volts POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS BUL45 CASE 221A–06 TO–220AB PD TJ, Tstg Watts W/°C °C BUL45F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED – 65 to 150 THERMAL CHARACTERISTICS Rating Thermal ...