DatasheetsPDF.com

2SC2534

Part Number	2SC2534
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150(V)(Min.) ·100% avalanche tested ·Minimum Lot-to...
Features	C= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Volt...
Published	Sep 28, 2020
Datasheet	2SC2534 PDF File

Features

C= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 D...

Similar Datasheet

2SC2530
Silicon High Speed Power Transistors
(Fujitsu)
2SC2531
Silicon NPN Transistor
(Toshiba)
2SC2532
Silicon NPN Epitaxial Type TRANSISTOR
(Toshiba Semiconductor)
2SC2534
SILICON POWER TRANSISTOR
(SavantIC)
2SC2535
NPN Transistor
(INCHANGE)
2SC2535
SILICON POWER TRANSISTOR
(SavantIC)
2SC2538
NPN EPITAXIAL PLANAR TYPE TRANSISTOR
(Mitsubishi Electric Semiconductor)
2SC2539
NPN EPITAXIAL PLANAR TYPE TRANSISTOR
(Mitsubishi Electric Semiconductor)

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)