SILICON POWER TRANSISTOR - SavantIC
Description
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.
0µs(Max.
) : tf=1.
0µs(Max.
APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC2535
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 6 5 1 1.
5 W UNIT V V V A A
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=3A; IB=0.
6A IC=3A; IB=0.
6A VCB=400V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=5V 10 MIN 400 500
2SC2535
SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V
1.
0 1.
5 100 1
V V µA mA
Switching times tr tstg tf Rise time Storage time Fall time VCC=200V; IB1=-IB2=0.
3A;RL=68> Duty cycle@1% 1.
0 2.
5 1.
0 µs µs µs
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2535
Fig.
2 Outline dimensions (unindicated tolerance:±0.
10 mm)
3
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
2SC2535
4
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