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BD900

Part Number	BD900
Manufacturer	INCHANGE
Title	PNP Transistor
Description	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @I...
Features	sistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon...
Published	Sep 22, 2020
Datasheet	BD900 PDF File

Features

sistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO...

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