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BD900A

Part Number	BD900A
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(...
Datasheet	BD900A PDF File

Overview

isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD899A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-Continuous -0.
3 Collect...

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