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2SD2389

Part Number	2SD2389
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min....
Features	specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Colle...
Published	Sep 21, 2020
Datasheet	2SD2389 PDF File

2SD2389
2SD2389

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Features

specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 6mA ICBO Collector Cutoff...

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