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2SD2383

Renesas
Part Number 2SD2383
Manufacturer Renesas
Description NPN Transistor
Published Aug 7, 2020
Detailed Description DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION The 2SD...
Datasheet PDF File 2SD2383 PDF File

2SD2383
2SD2383

Overview
DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION The 2SD2383 is an element realizing high voltage in small dimension.
This transistor is ideal for downsizing sets requiring high voltage.
FEATURES • High voltage • Small dimension ORDERING INFORMATION PART NUMBER 2SD2383 Marking: N1 PACKAGE SC-59 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 5.
0 V Collector Current (DC) IC(DC) 20 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) +0.
1 –0.
05 2.
8 ±0.
2 1.
5 0.
65 +0.
1 –0.
15 0.
4 2 2.
9 ±0.
2 0.
95 0.
95 +0.
1 –0.
05 0.
4 3 1 Marking +0.
1 –0.
06 1.
1 to 1.
4 0.
3 0.
16 0 to 0.
1 1.
Emitter 2.
Base 3.
Collector The information in this document is subject to change without notice.
Before using this document, please confirm ...


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