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2SB861

Part Number	2SB861
Manufacturer	INCHANGE
Title	PNP Transistor
Description	·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp...
Features	MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -150 V V(BR)EBO Emitter-Base Brea...
Published	Sep 17, 2020
Datasheet	2SB861 PDF File

2SB861
2SB861

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Features

MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -3.0 V VBE(on) Base...

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