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2SB861

GME
Part Number 2SB861
Manufacturer GME
Description PNP Epitaxial Silicon Transistor
Published Apr 4, 2018
Detailed Description PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Compleme...
Datasheet PDF File 2SB861 PDF File

2SB861
2SB861

Overview
PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138.
Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -200 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -150 V -6 V -2 A -5 1.
8 W 30 -45 to +150 ℃ X032 Rev.
A www.
gmesemi.
com 1 Production specification PNP Epitaxial Silicon Transistor 2SB861 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN Typ MAX UNIT Collector-base Breakdown Voltage V(BR)CBO IC=-50mA,IE=0 -150 V Emitter-base Breakdown Voltage V(BR)EBO IE=-5mA,IC=0 -6 V Collector Cut-off Current ICBO DC C...


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