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KSD5001

Part Number	KSD5001
Manufacturer	Inchange Semiconductor
Title	Silicon NPN Power Transistor
Description	·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Dampe...
Features	ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= ...
Published	Aug 10, 2016
Datasheet	KSD5001 PDF File

Features

ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 3.5A IC= ...

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