KTC2825D Datasheet

KTC2825D EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KTC2825D EPITAXIAL PLANAR NPN TRANSISTOR LED DRIVE APPLICATION FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-B.

Features

Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature Ta=25 TC=25 Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg RATING 60 60 6 3 6 600 1 15 150 -55 150 UNIT V V V A A mA W W A C M G FF 123 E BD H K J DIM MILLIMETERS A 6.6 +_0.2 B 6.1+_ 0.2 C 5.0 +_ 0.2 D 1.1+_ 0.2 E 2.7 +_ 0.2 F 2.3+_ 0.1 G 1.0.