KTC2803

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER FEATURES ᴌComplementary to KTA1704. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note1) Base Current VCBO VCEO VEBO IC ICP IB 120 120 5 1.2 2.5 0.3 Collector Power Ta=25ᴱ Dissipation Tc=25ᴱ PC 1.5 20 Junction Temperature Tj 150 Storage Temperature Range Tstg -55ᴕ150 Note 1 : Pulse Width ⏊10mS, Duty Cycle⏊50% UNIT V V V A A W ᴱ ᴱ KTC2803 EPITAXIAL PLANAR NPN TRANSISTOR A B C H J K D E F G L M N 12 3 O P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.1+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75+_ 0.15 14.0 MIN 2.3+_ 0.1 0.75+_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VCB=50V, IE=0 VEB=4V, IC=0 IC=10ỌA, IE=0 IC=1mA, IB=0 IE=10ỌA, IC=0 VCE=5V, IC=50mA VCE=5V, IC=500mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz IC=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA (Note) : hFE(1) Classification Y:100ᴕ200, GR:160ᴕ320 MIN...