Photodiode datasheet

No.	Part #	Manufacturer	Description
1	FCI-125G-xxxHR	Laser Components	Large Active Area and High Speed Silicon Photodiodes
2	C30662	Excelitas	Large Area InGaAs Avalanche Photodiodes  Spectral response 1100 - 1700 nm  High responsivity  Low dark current and noise  Large area  RoHS-compliant  Available with lead-solder Applications  Eye-safe Laser Range Finding  Optical time-domain reflectometer (OTDR)  Optical communicat
3	FDS1010	Thorlabs	Photodiodes n lower the photo diode capacitance. 1 0.35 , 2 Specifications Specification Wavelength Range Active Area Rise/Fall Time (RL=50 Ω, 5 V) Bandwidth (RL=50 Ω, -3 dB, 5 V) NEP (900 nm) Dark Current, Max (5 V) Capacitance, Typical (5 V) Package Val
4	FDS010	Thorlabs	Photodiodes und can lower the photo diode capacitance. 1 0.35 , 2 Specifications Specification Wavelength Range Active Area Rise/Fall Time (RL=50 Ω, 20 V) Bandwidth (RL=50 Ω, -3 dB, 5 V) NEP (900 nm, 20 V) Dark Current, Max (20 V) Capacitance, Typical Pack
5	OP916	TT	PIN Junction Si Photodiode · ŽĂǆŝĂůůĞĂĚƐŐŽůĚƉůĂƚĞĚ · EĂƌƌŽǁƌĞĐĞŝǀŝŶŐĂŶŐůĞ · ŶŚĂŶĐĞĚƚĞŵƉĞƌĂƚƵƌĞƌĂŶŐĞ · &ĂƐƚƐǁŝƚĐŚŝŶŐƐƉĞĞĚ · >ŝŶĞĂƌƌĞƐƉŽŶƐĞǀƐ͘ŝƌƌĂĚŝĂŶĐĞ Description: ĂĐŚKWϵϭϲĐŽŶƐŝƐƚƐŽĨĂW/EũƵŶĐƟŽŶƐŝůŝĐŽŶƉŚŽƚŽĚŝŽĚĞŵŽƵŶƚĞĚŝŶĂŵŝŶŝĂƚƵƌĞŐůĂƐƐ-ůĞŶƐĞĚĐŽĂǆŝ
6	PDT1341-BS-D4	Agilent(Hewlett-Packard)	Pigtailed PIN Photodiodes • Variety of Flange/Pinout Options • Fiber Pigtail Options • Compact Package • High Reliability Planar InGaAs PIN Photodiode • High Responsivity Description The PDT range of products includes a variety of compact fiber pigtailed devices designed for
7	G9130-24	Hamamatsu Corporation	InGaAs PIN photodiode with preamp
8	BPW21	Siemens Semiconductor Group	Silicon Photodiode for the visible spectral range q Especially suitable for applications from 350 nm to 820 nm q Adapted to human eye sensitivity (Vλ) q Hermetically sealed metal package (similar to TO-5) Applications q Exposure meter for daylight q For artificial light of high color temperature in
9	BPW41	Vishay Telefunken	Silicon PIN Photodiode D D D D D D D Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° High radiant sensitivity Fast response times Small junction capacitance Plastic case with IR filter (l=950 nm) Suitable for near infrared radiation 94 848
10	BPW21	OSRAM	Silicon Photodiode ——Package: hermetically sealed ——Especially suitable for applications from 350 nm to 820 nm ——Adapted to human eye sensitivity (Vλ) ——Package similar to TO-5 Ordering Information Type Photocurrent BPW 21 Ev = 1000 lx; Std. Light A; VR = 5 V
11	OP910	ETC	PIN SILICON PHOTODIODE • • • • Narrow receiving angle Fast switching time Linear response vs. irradiance Enhanced temperature range Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . .
12	OP999	ETC	PIN Sili con Photodiode • Narrow receiving angle • Linear response vs. irradiance • Fast switching time • T-1 3/4 package style Description The OP999 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The narrow re
13	VTP1220FB	PerkinElmer Optoelectronics	IR Blocking Silicon Photodiode Circuit Voltage @ 100fc Peak Spectral Response Sensitivity @ peak Angular Response (50% Point) Sym Isc ID CJ VOC Min. 0.7 Typ. 280 550 0.27 ± 70 www.DataSheet4U.com λPK SR θ1/2 Max. 10 18 - Units µA nA pF mV nm A/W Degrees Table 2: Absolute Maxi
14	VBPW34FAS	Vishay	Silicon PIN Photodiode • • • • • Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity VBPW34FAS • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fa
15	VBPW34S	Vishay	Silicon PIN Photodiode • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast
16	HFD3876	Honeywell	Silicon PIN Photodiode
17	OPR2100	TT	Six-Element SMD Photodiode Array  Six-PIN photodiode array  High-temperature chip carrier  Closely matched responsivity between elements  Choice of low or high speed  Easily mountable in any configuration  Suitable for harsh industrial operating conditions Description: Each
18	TIL100	Fairchild Semiconductor	Silicon Photodiode Iii:i:i~"~i:-~~~ 2 SQUARE PINS .1124(.610) =.0=18=(.40,6*) ==+1=0 SENSITIVE SURFACE o N o t. . All dimensions in inches bold and millimeler. (parantheses) Tolerance unless specified" ±.015 (±.381) Min Typ Max Units Test Conditions 35 50 pF 1
19	G7871	Hamamatsu Corporation	InGaAs PIN photodiode with preamp
20	G8605-21	Hamamatsu Corporation	InGaAs PIN photodiode Applications l High-speed response l Low noise l Various active area sizes available from φ1 to φ5 mm l Optical power meter l Water content analyzer l Laser diode life test Accessories (Optional) s Specifications / Absolute maximum ratings Type N