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SEMTECH |
PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
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BLUE ROCKET ELECTRONICS |
PNP Transistor Complementary to KTC3205. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation T |
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Multicomp |
PNP Power Transistor Designed for use in general purpose power amplifier and switching applications. • Collector-emitter sustaining voltage-VCEO (sus) = 100V (minimum). • Collector-emitter saturation voltage-VCE (sat) = 1.5V (maximum) at IC = 6.0A. • Current gain-bandwi |
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ETC |
PNP SILICON TRANSISTOR |
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SeCoS |
PNP Transistor Power Amplifier Applications MARKING A1020 Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 CLASSIFICATION OF hFE(1) Product-Rank A1020-O Range 70~140 A1020-Y 120~240 ORDER INFORMATION Part Number A1020 |
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Sanken |
Silicon PNP Transistor .9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) DC Current Gain hFE I C – V CE |
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Toshiba Semiconductor |
Silicon PNP Transistor cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab |
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GME |
PNP Silicon Transistor Low speed switching. Low saturation voltage. Excellent hFE linearity and high hFE. Complementary: D882. Pb Lead-free Production specification B772 APPLICATIONS Audio frequency power amplifier. TO-251 TO-252 MAXIMUM RATING @ Ta=25℃ unl |
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STMicroelectronics |
PNP MEDIUM POWER TRANSISTOR ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technol |
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INCHANGE |
Silicon PNP Power Transistor a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) .iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V wwwVCEO Collector-Emitter Voltage |
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Jingdao |
PNP power transistor |
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INCHANGE |
PNP Transistor B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0. |
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ETC |
PNP Transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A928A OA928A Y- 1 TO-92L 1. Emitter 2. Collector 3. Base Package TO-92 3L TO-92 3L Packing Method Ammo Am |
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MCC |
PNP Transistor • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) x High DC Current Gain:90Љ hFEЉ600.(VCE=-6.0V, IC=-1mA) x High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity |
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Promax Johnton |
PNP Transistor ain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(ON) Te st Conditions IC= -100μA , IE =0 IC= -1mA , IB=0 IE =-100μA , IC=0 VCB= -25V , |
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Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI |
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INCHANGE |
PNP Transistor 25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCBO Collector- Base Voltage IC= -1mA ; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VCE( |
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GME |
PNP Transistor |
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JCST |
PNP Transistor z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9014 TO-92 1.EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 |
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