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INCHANGE |
NPN Transistor perature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON |
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SeCoS |
NPN Transistor Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J |
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SavantIC |
Silicon NPN Power Transistors ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output |
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JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product TO-3PB ORDER MESSAGE Order codes 3DD13009K-O-C-N-B 3DD13009K-O-AB-N-B Marking D13009K D13009K Halogen Free NO NO Package TO-220C |
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Toshiba Semiconductor |
Silicon NPN Transistor hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test |
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LGE |
NPN Transistor Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 8.400 8.800 0.900 1.100 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Volt |
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Toshiba |
Silicon NPN Transistor ition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 9.75 g (typ.) Min ― ― 230 55 35 ― ― ― ― Typ. ― |
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Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
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TGS |
NPN Transistor z Excellent hFE linearity z Low noise z Complementary to A733 1.EMITTER 2.COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas |
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SEMTECH |
NPN Silicon Transistor at VCB = 50 V at VCB = 60 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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SavantIC |
Silicon NPN Power Transistors CEO(SUS) Collector-emitter sustaining voltage TIP41A TIP41B IC=30mA; IB=0 TIP41C VCE(sat) Collector-emitter saturation voltage IC=6A; IB=0.6A VBE Base-emitter on voltage IC=6A ; VCE=4V TIP41 VCE=40V; VEB=0 ICES Collector cut-off current |
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NEC |
NPN SILICON POWER TRANSISTOR • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment t |
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Toshiba Semiconductor |
Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2. |
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Wing Shing Computer Components |
NPN Triple Diffused Planar Silicon Transistor Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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SEMTECH |
NPN Silicon Transistor ctor Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figu |
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SavantIC |
Silicon NPN Power Transistors =5A;IB=1.25 A Base-emitter saturation voltage IC=5A;IB=1.25 A VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO ICBO ICES hFE-1 Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain VEB=4V I |
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Elite |
NPN Epitaxial Silicon Transistor Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector |
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