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Bruckewell |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
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Rectron |
P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.5mΩType4mΩ) l High Power and Current Handing Capability l Low Reverse transfer Capacitances(Typical:480pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ |
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Huajing |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherw |
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Low Power Semi |
N-Channel MOSFET ■ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V ■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V ■ Super high density cell design for extremely low RDS(ON) ■ SOT23 Package Applications Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor W |
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InPower Semiconductor |
N-Channel MOSFET 0pF,R=1.5K: 6000 V TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 *Drain Current limited |
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NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET ● VDS =85V,ID =160A RDS(ON) <3.8mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Marking and pin assignment Application |
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H&M Semiconductor |
P-Channel Trench Power MOSFET ● VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application |
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Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schemat |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * 15A, 600V, RDS(ON)=0.44Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Package TO-247 S: Source 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halog |
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CASS |
N-Channel Trench Power MOSFET ● VDS=60V; ID=15A RDS(ON)<40mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● load switching D444 To-252 Top View Schematic Diagram VDS =60V ID = 15A RDS(ON)= 32mΩ Package Marking and |
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Ruichips |
N-Channel Advanced Power MOSFET • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Pin Descripti |
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ST Microelectronics |
N-Channel Power MOSFET Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitan |
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ST Microelectronics |
N-CHANNEL Power MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H |
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NCE Power Semiconductor |
N & P-Channel Enhancement Mode Power MOSFET ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount pa |
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JINAN JINGHENG |
600V N-Channel Power MOSFET ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,high ruggedness MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 600 4.4 @ VGS =10V TO-220AB 2N60 ITO-2 |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with h |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Abso |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has spec |
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FNK |
N-Channel Power MOSFET ● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.5? mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipati |
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