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Excelliance MOS |
N-Channel MOSFET J W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB20N03V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC CHIPSET-IC.COM Drain‐Source Breakdown Voltage Gate Threshold |
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HAOHAI |
N-Channel MOSFET ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rat |
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REACTOR |
Single channel constant current LED control chip |
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Bruckewell |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
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WELLKING TECHNOLOGIES |
4.8W single channel Class-F audio power amplifier 89509090 MIX2018 4.8W F （ESOP8） WELLKING TECHNOLOGIES CO.,LTD 4/4 TEL:0755-83611411 FAX:0755-89509090 |
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Rectron |
P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
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GOOD-ARK |
75V N-Channel MOSFET and Benefits TO-220 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperat |
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Toshiba |
N-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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LTKCHIP TECHNOLOGY |
Dual Channel Class D Audio Amplifier |
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INCHANGE |
N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
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Huajing |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherw |
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HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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powerforest |
Single Channel WLED Driver Wide Input Range: 9V to 30V Current Mode Control 300mV Feedback Reference Short LED Protection Over Current Protection Over Temperature Protection Output Over Voltage Protection PWM Dimming Input 1000mA/-1500mA Output Driving Capabi |
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HOOYI |
N-Channel MOSFET • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Power |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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Novatek |
TFT-LCD 3-Channel Charge Pump Power IC ...................................................................................................................................................................5 3. Block Diagram and Operating Circuit ............................................. |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET TSTG Maximum 30 ±20 85 66 322 51 41 60 90 36 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Ty |
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Alpha & Omega Semiconductors |
N-Channel MOSFET The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (V |
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ChipSourceTek |
2.4W single channel Class AB audio power amplifier rce u Symbol o VDD VIH S VIL Parameter SD SD Chip Parameter Test Conditions MIN VDD 2.5 VDD=2.5V to 5.0V 1.3 VDD=2.5V to 5.0V MAX 5.5 0.35 UNIT V V V Symbol Package MAX UNIT (Junction to Ambient) θJA SOP8 110 °C/W TEL: +86 |
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