| No. | Part # | Manufacturer | Description | Datasheet |
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Silan |
600V FIELD STOP IGBT 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM |
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ETC |
600V 200A IGBT MOSFET |
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IXYS |
High speed IGBT |
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Infineon Technologies |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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TRinno |
Field Stop Trench IGBT •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification Applications : Induction Heating, Soft Switching Application, UPS, W |
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Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low |
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Fairchild Semiconductor |
Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C GC E |
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Renesas |
Silicon N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: P |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Fairchild Semiconductor |
40A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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Danfoss Silicon Power GmbH |
E2 IGBT 101623 PIM brake NTC DP10H600T 101622 DP15H600T 101621 DP20H600T 101620 DP30H600T 101619 DP50H600T * 1016xx DP10H1200T 101618 DP15H1200T 101617 DP25H1200T 101616 - * Types under development. Custom circuits and configurations on request. Outline Ci |
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EGmicro |
Power MOS tube / IGBT gate driver .................... 4 4.2. ............................................................................................................................................. 4 ............................................................................ |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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STMicroelectronics |
short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar application |
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Infineon |
IGBT •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highrugge |
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Infineon |
High-speed5 IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull- |
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Infineon |
IGBT • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications G E offers : - very tight parameter distribution - high ruggedness, tem |
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Agilent |
Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler • 2.5 A maximum peak output current • 2.0 A minimum peak output current • 15 kV/µs minimum Common Mode Rejection (CMR) at VCM = 1500 V • 0.5 V maximum low level output voltage (VOL) Eliminates need for negative gate drive • ICC = 5 mA maximum supply |
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Infineon Technologies |
IGBT Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circui |
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