| No. | Part # | Manufacturer | Description | Datasheet |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr |
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ON Semiconductor |
Dual Series Schottky Barrier Diode |
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Motorola |
Dual Series Schottky Barrier Diode |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes CTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) V(BR)R 30 — — Volts CT — 7.6 |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes 0 Unit Volts 200 1.6 200Max 125Max –55 to +150 mW mW/°C mA °C °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage ( |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes 0Max 125Max –55 to +150 mW mW/°C mA °C °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Volta |
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Motorola Inc |
30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES HARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc |
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ON Semiconductor |
DUAL SERIES SCHOTTKY BARRIER DIODES http://onsemi.com • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc • Pb−Free Package is Available 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES 1 ANODE 2 CATHODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125°C un |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes CAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes CAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are P |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb− |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb− |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes Max –55 to +150 mW mW/°C mA °C °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes AL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) V(BR)R CT IR 30 — — Forward Voltage (IF |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes s otherwise noted) (EACH DIODE) Characteristic Symbol Min Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) V(BR)R CT IR 30 — — Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = |
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ON Semiconductor |
Dual Series Schottky Barrier Diode • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and |
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Leshan Radio Company |
Dual Series Schottky Barrier Diodes |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr |
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