| No. | Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Advanced Power Electronics |
AP2761I-A rgy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units ℃/W ℃/W Data & speci |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Unit ℃/W Data and specifications subject to change without notice 1 200902044 Free Datasheet http://www.datasheet4u.com/ AP2306GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Brea |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET to 150 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal R |
|
|
|
|
Advanced Power Electronics |
AP20T03GH 0.1 -55 to 150 -55 to 150 TO-251(J) Units V V A A A W W/℃ ℃ ℃ Value 10 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200809013 AP20T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Par |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET s V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201008171 AP2533GY-HF N-CH Electrical Characteristics@Tj=25oC |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE ol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200407043 AP2301N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj P |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit ℃/W Data and specifications subject to change without notice 200425051-1/7 Datasheet pdf - http://www.Data |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET hermal Data Symbol Parameter Rthj-amb Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201409042 AP2323GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specif |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200517051-1/4 AP2604GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 201227051-1/4 AP2311GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Sym |
|
|
|
|
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2306GN-HF-3TR RoHS-compliant, halogen-free SOT-23, shipped on tape an |
|
|
|
|
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET otal Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2324GN-HF-3TR : in RoHS-compliant halo |
|
|
|
|
Advanced Power Electronics |
N-channel Enhancement mode Power MOSFET otal Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit °C/W Ordering Information AP2322GN-HF-3TR : in RoHS-compliant hal |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET e Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 180 Unit °C/W Ordering Information AP2318GEN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and ree |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ating Junction Temperature Range 18 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET specifications subject to change without notice 1 200812031 AP2306AGEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source B |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 Value 90 Unit ℃/W 1 201208081 Data and specifications subject to change without notice AP2306AGEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET .5 12 -12 V V A A A PD@TA=25℃ Total Power Dissipation 1.13 W TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambie |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Threshold Voltage VCE=VGE, IC=250uA 0.3 - Qg Total Gate Charge IC=40A - 76 Qge Gate-Emitter Charge VCE=200V -4 Qgc Gate-Collector Charge VGE=4V - 26 td(on) Turn-on Delay Time VCC=320V - 220 tr Rise Time IC=160A - 800 td(off) Turn- |
|