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STMicroelectronics |
SILICON PNP SWITCHING TRANSISTORS hermal Resistance Junction-ambient Max Max 3.12 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = - 1.5V) for for TC for for Test Conditions 2N6107 2N6111 o |
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Savantic |
(2N6107 - 2N6111) Silicon PNP Power Transistors uct Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6107 VCEO(SUS) Collector-emitter sustaining voltage 2N6109 2N6111 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N |
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INCHANGE |
PNP Transistor stor 2N6107 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A VBE(on) Base-E |
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NTE |
Silicon PNP Transistor D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current−Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO |
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Savantic |
(2N6107 - 2N6111) Silicon PNP Power Transistors uct Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6107 VCEO(SUS) Collector-emitter sustaining voltage 2N6109 2N6111 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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Semelab |
HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS • Silicon Planar Epitaxial Base Transistors • Medium Power Switching • Linear Applications 2.54 Pin 1 – Base 0.81 Typ. 5.08 TO220 Pin 2 – Collector 0.39 Ref. 2.54 Pin 3 – Emitter PNP NPN 2N6107 2N6292 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unle |
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ON Semiconductor |
Complementary Silicon Plastic Power Transistors • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, |
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Savantic |
(2N6107 - 2N6111) Silicon PNP Power Transistors uct Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6107 VCEO(SUS) Collector-emitter sustaining voltage 2N6109 2N6111 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N |
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CDIL |
PLASTIC POWER TRANSISTORS ector Cut off Current ICEO ICEX VCE=60V, IB=0 VEB(off) =1.5V; VCE=80V VEB(off) =1.5V; VCE=70V; Tc=150ºC Emitter Cut off Current IEBO VEB=5V, IC=0 Collector Emitter (sus) Voltage *VCEO(sus) IC=100mA, IB=0 Collector Emitter Saturation Voltage |
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GME |
PNP Epitaxial Silicon Transistor z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter |
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