N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
STM6716Green
Product
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
12.
5 @ VGS=10V 60V 10A
16 @ VGS=4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c IDM -Pulsed a c
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy d
TC=25°C PD Maximum Power Dissipation
TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 60 ±20 10 8 50 121 2.
5 1.
6
-55 to 150
50
Units V V A A A mJ W W °C
°C/W
Details are subject to change without notice.
1
Dec,19,2014
www.
samhop.
com.
tw
STM6716
Ver 1.
0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr tD(OFF)
Rise Time Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=5A VGS=4.
5V , ID=4.
5A VDS=5V , ID=5A
VDS=25V,VGS=0V f=1.
0MHz
VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=5A,VGS=10V VDS=30V,ID=5A,VGS=4.
5V VDS=30V,ID=5A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=5A
Notes
a.
Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.
Guaranteed by design, not subject to production testi...
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