SILICON BRIDGE RECTIFIERS
Description
CBR35-010P SERIES
SILICON BRIDGE RECTIFIERS 35 AMP, 100 THRU 1000 VOLT
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR35-010P series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications.
The molded epoxy case has a built-in metal baseplate for heat sink mounting.
The device utilizes standard 0.
25” FASTON terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR 100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
I2t Rating for Fusing (1ms3ms)
I2t
-020P 200
200
140
RMS Isolation Voltage (case to lead)
Operating and Storage Junction Temperature
Thermal Resistance
Viso
TJ, Tstg ΘJC
CBR35 -040P -060P
400 600 400 600 280 420
35 400 660 2500
-65 to +150 1.
4
-080P 800
800
560
-100P 1000
1000
700
UNITS V V V A A A2s
Vac
°C °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=17.
5A
1.
2
CJ VR=4.
0V, f=1.
0MHz
300
UNITS μA μA V
pF
R3 (24-June 2013)
CBR35-010P SERIES SILICON BRIDGE RECTIFIERS 35 AMP, 100 THRU 1000 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
w w w.
c e n t r a l s e m i .
c o m
R3 (24-June 2013)
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