LOW LEAKAGE SWITCHING DIODE
Description
BAS116WS
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
VOLTAGE 100 Volts
POWER 200mWatts
SOD-323
FEATURES
• Suface mount package ideally suited for automatic insertion.
• Very low leakage current.
2pA typical at VR=75V.
• Low capacitance.
2pF max at VR=0V, f=1MHz • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOD-323 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.
00014 gram • Marking: PA
.
054(1.
35) .
045(1.
15)
.
078(1.
95) .
068(1.
75)
Unit: inch (mm)
.
014(.
35) .
009(.
25)
.
038(.
95) .
027(.
70)
.
006(.
15) .
002(.
05)
.
107(2.
7) .
090(2.
3)
.
012(.
30)MIN.
ABSOLUTE RATINGS (each diode)
Reverse Voltage
PA RA ME TE R
Peak Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Surge Current at t=1.
0us
S ym b o l VR V RM IF
I FSM
THERMAL CHARACTERISTICS
PA RA ME TE R Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e
S ym b o l P TOT RθJA TJ TSTG
NOTE: 1.
FR-5 Board = 1.
0 x 0.
75 x 0.
062 in.
Value 75 100 0.
2 2.
0
Value 200 625
-55 to 150 -55 to 150
Uni ts V V A A
Uni ts mW O C /W OC OC
STAD-SEP.
07.
2007
PAGE .
1
BAS116WS
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
PARAMETER Reverse Breakdown Voltage Reverse Current
Forward Voltage
To t a l C a p a c i t a nc e Re ve rs e Re c o ve ry Ti me
S ym b o l
Te s t C o nd i t i o n
V (BR) IR VF CT
IR=100 uA
VR=75 V VR=75 V,TJ=150 OC IF = 1 m A IF = 1 0 m A IF = 5 0 m A IF = 1 5 0 m A
VR=0 V, f=1MHZ
trr IF=IR=1 0 mA , RL=1 0 0 Ω
MIN.
75
TYP.
0.
002 8.
0
MAX.
5 80 0.
9 1.
0 1.
1 1.
25 2.
0
3.
0
Uni ts V nA
V
pF us
CHARACTERISTIC CURVES (each diode)
IR, Reverse Leakage(nA)
10
1.
0
0.
1 VR=75V
0.
01
0.
001 0
50 100 150 200
Tj, Junction Temperature (Deg C)
Fig.
1-Reverse Leakage vs.
Junction Temperature
IF, Forward current (mA)
1000
100 10
TA=-25OC
1.
0 TA=75OC
0.
1 0.
2
TA=125OC
TA=25OC
0.
4 0.
6 0.
8 1.
0
VF, Forwar...
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