N & P-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec.
No.
: C744Q8 Issued Date : 2009.
10.
16 Revised Date : 2014.
01.
03 Page No.
: 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10AQ8
N-CH P-CH
BVDSS
100V -100V
ID 2.
4A -2.
2A
Description
RDSON(MAX.
) 150mΩ 220mΩ
The MTBA5C10AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10AQ8
Outline
SOP-8
G:Gate S:Source D:Drain
Ordering Information
Device MTBA5C10AQ8-0-T3-G
Package
Shipping
SOP-8 (Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5C10AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C744Q8 Issued Date : 2009.
10.
16 Revised Date : 2014.
01.
03 Page No.
: 2/12
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2) TA=100 °C, VGS=10V (-10V) Pulsed Drain Current (Note 1)
Symbol BVDSS
VGS
ID
IDM
Limits N-channel P-channel
100 -100 ±20 ±20
2.
4 -2.
2
1.
5 -1.
4
12 -10
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
PD 1.
6 (Note 2) 0.
9 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
Unit V A
W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c
Rth,j-a
Note : ...
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