N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec.
No.
: C790Q8 Issued Date : 2010.
07.
23 Revised Date : 2012.
05.
07 Page No.
: 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA0N10Q8 BVDSS ID RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=4.
5V, ID=3A
100V 5A 90mΩ(typ)
94mΩ(typ)
Description
The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free and Halogen-free package
Symbol
MTBA0N10Q8
Outline
Pin 1
SOP-8
G：Gate D：Drain S：Source
MTBA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C790Q8 Issued Date : 2010.
07.
23 Revised Date : 2012.
05.
07 Page No.
: 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.
1mH, ID=5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.
05mH
Total Power Dissipation
TA=25℃ TA=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
Limits
100 ±20
5 3.
1 20 *1 5 1.
25 0.
625 *2 3 1.
2
-55~+150
Unit
V
A
mJ W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1.
Pulse width limited by maximum junction temperature.
2.
Duty cycle≤1%.
3.
Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Co...
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