Trench MOS Barrier Schottky Rectifier
Description
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VT4045BP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS®
TO-220AC
FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material cat...
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