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FMMT491Q

NPN MEDIUM POWER TRANSISTOR

Description

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature  BVCEO > 60V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse Current  RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance  500mW Power Dissipation  hFE Characterized up to 2A for High Current Gain Hold Up  Co...

Diodes

FMMT491Q PDF File

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