SILICON PNP DARLINGTON TRANSISTORS
Description
MPSA75 MPSA76 MPSA77
SILICON PNP DARLINGTON TRANSISTORS
w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA75 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCES VEBO IC PD TJ, Tstg JA
MPSA75 MPSA76 MPSA77 40 50 60 40 50 60 10 500 625 -65 to +150 200
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=30V
ICBO
VCB=40V
ICBO
VCB=50V
ICES
VCE=30V
ICES
VCB=40V
ICES
VCB=50V
IEBO
VEB=10V
BVCBO
IC=100μA
BVCES
IC=100μA
VCE(SAT) IC=100mA, IB=0.
1mA
VBE(ON)
VCE=5.
0V, IB=100mA
hFE VCE=5.
0V, IC=10mA
hFE VCE=5.
0V, IC=100mA
fT VCE=5.
0V, IC=10mA
MPSA75 MIN MAX
- 100 --- 500 --- 100 40 40 - 1.
5 - 2.
0 10K 10K 125 -
MPSA76 MIN MAX
-- 100 --- 500 -- 100 50 50 - 1.
5 - 2.
0 10K 10K 125 -
MPSA77 MIN MAX
--- 100 --- 500 - 100 60 60 - 1.
5 - 2.
0 10K 10K 125 -
UNITS V V V mA
mW °C °C/W
UNITS nA nA nA nA nA nA nA V V V V
MHz
R1 (18-March 2014)
MPSA75 MPSA76 MPSA77 SILICON PNP DARLINGTON TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER
w w w.
c e n t r a l s e m i .
c o m
R1 (18-March 2014)
MPSA75 MPSA76 MPSA77
SILICON PNP DARLINGTON TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
w w w.
c e n t r a l s e m i .
c o m
R1 (18-March 2014)
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