P-Channel Enhancement Mode Power MOSFET
Description
Elektronische Bauelemente
SPR45P03
-45A , -30V , RDS(ON) 15 mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR45P03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
45P03
= Date code
REF.
A B C D E F
Millimeter
Min.
Max.
4.
9 5.
1
5.
7 5.
9
5.
95
6.
2
1.
27 BSC.
0.
35 0.
49
0.
1 0.
2
REF.
G H I J K L
Millimeter Min.
Max.
0.
8 1.
0
0.
254 Ref.
4.
0 Ref.
3.
4 Ref.
0.
6 Ref.
1.
4 Ref.
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C
Pulsed Drain Current 2 Single Pulse Avalanche Energy 3
TA=70°C
VDS VGS
ID
IDM EAS
-30 ±20 -45 -30 -9.
6 -7.
7 -150 264
Avalanche Current Total Power Dissipation 4
TC=25°C
IAS PD
-42 48
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA RθJC
62 2.
6
Unit V V A A A A A mJ A W °C
°C / W °C / W
http://www.
SeCoSGmbH.
com/
19-May-2014 Rev.
A
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SPR45P03
-45A , -30V , RDS(ON) 15 mΩ P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30 -
-
V VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1 - -2.
5 V VDS=VGS, ID= -250uA...
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