700V N-Channel Super Junction MOSFET
Description
HCD6N70S_HCU6N70S
June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ...
Similar Datasheet