650V N-Channel Super Junction MOSFET
Description
HCD65R660S_HCU65R660S
June 2015
HCD65R660S / HCU65R660S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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