Schottky barrier Diodes
Description
RoHS RB421D
SOT-23-3L
RB421D Schottky barrier Diodes
FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability
Marking: D3C
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
ICPeak reverse voltage NDC reverse voltage
Mean rectifying current
OPeak forward surge current RJunction temperature TStorage temperature
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 40 100 1 125
-40~+125
LECElectrical Ratings @TA=25℃ Parameter EForward voltage JReverse current
WECapacitance between terminals
Symbol Min.
Typ.
Max.
Unit VF1 0.
55 V VF2 0.
34 V IR 30 µA CT 6 pF
1.
9
0.
95¡ À0.
025
1.
02
-
+
TD2.
80¡À0.
05 CO.
,L1.
60¡À0.
05
Unit V V mA A
℃ ℃
Conditions IF=100mA IF=10mA VR=10V VR=10V, f=1MHZ
0.
35 2.
92¡ À0.
05
WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@yongerjia.
com
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