STATIC CMOS RAM
Description
P3C1021 HIGH SPEED 64K x 16 (1 MEG) STATIC CMOS RAM
FEATURES
High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (Industrial) Low Power — 325 mW (max.
) Single 3.
3V ± 0.
3V Power Supply Easy Memory Expansion Using CE and OE Inputs
DESCRIPTION
The P3C1021 is a 65,536 words by 16 bits high-speed CMOS static RAM.
The CMOS memory requires no clocks or refreshing, and has equal access and cycle times.
Inputs are fully TTL-compatible.
The RAM operates from a single 3.
3V ± 0.
3V tolerance power supply.
Access times as fast as 10 nanoseconds permit greatly enhanced system operating speeds.
CMOS is utilized to reduce power consumption to a low level.
The P3C1021 is a member of a family of PACE RAM™ products offering fast access times.
FUNCTIONAL BLOCK DIAGRAM
Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down when deselected Packages —44-Pin SOJ, TSOP II
The P3C1021 device provides asynchronous operation with matching access and cycle times.
Memory locations are specified on address pins A0 to A15.
Reading is accomplished by device selection (CE and output enabling (OE) while write enable (WE) remains HIGH.
By presenting the address under these conditions, the data in the addressed memory location is presented on the data input/output pins.
The input/output pins stay in the HIGH Z state when either CE or OE is HIGH or WE is LOW.
Package options for the P3C1021 include 44-pin SOJ and TSOP packages.
PIN CONFIGURATION
1519B
SOJ
TSOPII
Document # SRAM134 REV OR Revised April 2007
1
P3C1021
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC Power Supply Pin with Respect to GND
VTERM
Terminal Voltage with Respect to GND
Value Unit –0.
5 to +4.
6 V
–0.
5 to VCC +0.
5
V
TA Operating Temperature –55 to +125 °C
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Ambient Temperature
GND
VCC
Industrial –40°C to +85°C Commercial 0°C to +70°C
0V 3.
3V ± 0.
3V 0V 3.
3V ± 0.
3V
Symbol Parameter TBIAS ...
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