N-Channel MOSFET
Description
HFW12N60S
Jan 2013
HFW12N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
Similar Datasheet