N-Channel MOSFET
Description
HFS13N50U
HFS13N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
Nov 2013
BVDSS = 500 V RDS(on) typ = 0.
39 ȍ ID = 13 A
TO-220F
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 13 * 8.
2 * 52 * ρ30 580 13 4.
1 4.
5
PD TJ, TSTG TL
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
41 0.
33 -55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ.
---
Max.
3.
05 62.
5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
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HFS13N50U
Package Marking and Odering Information
Device Marking HFS13N50U HFS13N50U
Week Marking YWWX YWWXg
Package TO-220F(A) TO-220F(A)
Packing Tube Tube
TO-220F(A) : Dual Gauge
Quantity 50 50
RoHS Status Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6.
5 A
2.
5 --
Off Characteristics
BVDSS ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
IDSS Zero...
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