N-CHANNEL MOSFET
Description
N R N-CHANNEL MOSFET
JCS65N20T
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max （@Vgs=10V） Qg-typ
UPS
65A 200 V
32mΩ
120nC
APPLICATIONS High frequency switch
mode power supplies Electronic lamp ballasts
based on half bridge UPS
Crss dv/dt RoHS
FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS65N20ABT-O-AB-N-B JCS65N20ABT
Package
TO-3PB
Halogen
Free NO
Packaging
Tube
Device Weight 5.
14g (typ)
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R JCS65N20T
ABSOLUTE RATINGS (Tc=25℃)
Parameter
－ Drain-Source Voltage
Symbol
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current – pulse（note 1）
Gate-Source Voltage
IDM VGSS
( 2) Single Pulsed Avalanche Energy（note 2） EAS
( 1) Avalanche Current（note 1）
IAR
（ 1） Repetitive Avalanche Energy（note 1）
EAR
Value JCS65N20ABT
200 65 42 260 ±30
1056
65
35.
7
Unit V A A A V
mJ
A
mJ
( 3) Peak Diode Recovery dv/dt（note 3）
dv/dt
Power Dissipation
PD TC=25℃ -Derate above 25℃
Operating and Storage Temperature Range TJ，TSTG
Maximum Lead Temperature for Soldering TL Purposes
* *Drain current limited by maximum junction temperature
5.
4 357 2.
86 -55～+150
300
V/ns W
W/℃ ℃
℃
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R
ELECTRICAL CHARACTERISTICS
JCS65N20T
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
－ Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
200 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.
16 -
Zero Gate Voltage Drain Current
IDSS
VDS=200V,VGS=0V,TC=25℃ VDS=160V, TC=125℃
-
- 1 μA - 10 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.
0 - 4.
0 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=32.
5A
- 25 32 mΩ...
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