1-Gbit Double-Date-Rate-Three SDRAM
Description
July 2014
HXB15H1G800CF HXB15H1G160CF
1-Gbit Double-Date-Rate-Three SDRAM DDR3 SDRAM EU RoHS HF Compliant Products
Data Sheet
Rev.
1
Revision History: Rev.
1, 2014-07 Initial version
Data Sheet
HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM
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SCS_techdoc_A4, 2014-07
2
Data Sheet
1 Overview
HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM
This chapter gives an overview of the 1-Gbit Double-Data-Rate-Three SDRAM product family and describes its main characteristics.
1.
1 Features
The 1-Gbit Double-Data-Rate-Three SDRAM offers the following key features:
• 1.
5 V ±0.
075 V Power Supply
• Off-Chip-Driver impedance adjustment (OCD) and
1.
5 V ±0.
075 V (SSTL_15) compatible I/O • DRAM organizations with 8/16 data in/outputs • Double Data Rate architecture:
– two data transfers per clock cycle – eight internal banks for concurrent operation • Programmable CAS Latency: 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported • Programmable Burst Length: 4/8 with both nibble
sequential and interleave mode.
• Differential clock inputs (CK and CK) • Bi-directional, differential data strobes (DQS and DQS) are
transmitted / received with data.
Edge aligned with read
On-Die-Termination (ODT) for better signal quality
• Auto-Precharge operation for read and write bursts • Auto-Refresh, Self-Refresh and power saving Power-
Down modes • Operating temperature range 0°C to 85°C for standard use.
• Operating temperature range -40°C to 85°C for industrial
use.
• Average Refresh Period 7.
8 μs at a TCASE lower than 85 °C, 3.
9 μs between 85 °C and 95 °C
• Asynchronous RESET pin supported • TDQS (Termination Data Strobe) supported (x8 only) • Write Levelization supported • 1KB page size for x8; 2KB
d...
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