N-Channel MOSFET
Description
N-Channel 30 V (D-S) MOSFET
SiSA14DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.
)
30 0.
00510 at VGS = 10 V 0.
00850 at VGS = 4.
5 V
ID (A)f, g Qg (Typ.
) 20 9.
4 nC
PowerPAK® 1212-8
3.
30 mm
D 8D
7 D
6 D
5
S 1S
3.
30 mm
2 S
3G
4
Bottom View
Ordering Information: SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS
• DC/DC Conversion • Synchronous Rectification • Synchronous Buck Converter • DC/AC Inverter
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
30
+ 20, - 16 20g 20g
19.
7a, b 10.
4a, b
80 20g 3.
2a, b
15
11.
25
26.
5
17 3.
57a, b 2.
3a, b - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain)
t 10 s Steady State
Symbol
RthJA RthJC
Typical 28 3.
8
Maximum 35 4.
7
Unit °C/W
Notes: a.
Surface mounted on 1" x 1" FR4 board.
b.
t = 10 s.
c.
See solder profile (www.
vishay.
com/doc?73257).
The PowerPAK 1212-8 is a leadless package.
The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing.
A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
d.
Rework conditions: manual solderin...
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