N-Channel 75-V (D-S) MOSFET
Description
N-Channel 75-V (D-S) MOSFET
SiE818DF
Vishay Siliconix
PRODUCT SUMMARY
ID (A)a
VDS (V)
RDS(on) (Ω)e
Silicon Package
Limit
Limit Qg (Typ.
)
75 0.
0095 at VGS = 10 V 0.
0125 at VGS = 4.
5 V
79 69
60 33 nC
60
Package Drawing www.
vishay.
com/doc?72945
10 9 8 D GS
7 S
PolarPAK
6 D6
7
8 9 10
D D S GD
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
• Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Primary Side Switch • Half-Bridge • Synchronous Rectification
D
G
D GS
S
1 23
4
Top View
D 5
54
32 1
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE818DF-T1-E3 (Lead (Pb)-free) SiE818DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
For Related Documents www.
vishay.
com/ppg?74337
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.
1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
75
± 20
79 (Silicon Limit) 60a (Package Limit)
60a 16b, c 12.
9b, c
80 60a 4.
3b, c 50
125
125
80 5.
2b, c 3.
3b, c - 55 to 150
260
V
A
mJ W °C
Notes: a.
Package limited.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
See Solder Profile (www.
vishay.
com/doc?73257).
The PolarPAK is a leadless package.
The end of the lead terminal is exposed copper (not...
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