N-Channel 100-V (D-S) MOSFET
Description
New Product
N-Channel 100 V (D-S) MOSFET
Si7454DDP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max.
0.
033 at VGS = 10 V 0.
036 at VGS = 7.
5 V 0.
047 at VGS = 4.
5 V
ID (A)a 21 20 17.
7
PowerPAK® SO-8
Qg (Typ.
) 6.
1 nC
6.
15 mm
S 1S
5.
15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7454DDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS
• DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial • Synchronous Rectification
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.
1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit 100 ± 20 21 17 7.
9b, c 6.
3b, c 40 22 3.
7b, c 12 7.
2 29.
7 19 4.
1b, c 2.
6b, c - 55 to 150 260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t 10 s Steady State
RthJA RthJC
24 3.
3
30 °C/W 4.
2
Notes:
a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
See solder profile (www.
vishay.
com/doc?73257).
The PowerPAK SO-8 is a leadless package.
The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing.
A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom si...
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