N-Channel 100-V (D-S) MOSFET
Description
New Product
N-Channel 100 V (D-S) MOSFET
Si4190ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max.
0.
0088 at VGS = 10 V 0.
0094 at VGS = 7.
5 V 0.
0120 at VGS = 4.
5 V
SO-8
ID (A)a 18.
4 17.
8 15.
8
Qg (Typ.
) 20.
7 nC
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance www.
vishay.
com/doc?99912
please
see
APPLICATIONS
• DC/DC Primary Side Switch • Telecom/Server • Industrial
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.
1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
100 ± 20 18.
4 14.
6 13b, c 10.
3b, c
70 5.
4 2.
7b, c 30
45 6 3.
8 3b, c 1.
9b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under steady state conditions is 85 °C/W.
Symbol RthJA RthJF
Typical 33 16
Maximum 42 21
Unit V
A
mJ W °C Unit °C/W
Document Number: 63826
For technical support, please contact: pmostechsupport@vishay.
com
www.
vishay.
com
S12-0541-Rev.
A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000
Si4190ADY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Co...
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