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HN4B102J

Toshiba
Part Number HN4B102J
Manufacturer Toshiba
Description Silicon PNP/NPN Transistor
Published Feb 3, 2016
Detailed Description HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switchi...
Datasheet PDF File HN4B102J PDF File

HN4B102J
HN4B102J

Overview
HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC =－0.
2 A) : NPN hFE = 200 to 500 (IC = 0.
2 A) • Low collector-emitter saturation : PNP VCE (sat) =－0.
20 V (max) : NPN VCE (sat) = 0.
14 V (max) • High-speed switching : PNP tf = 40 ns (typ.
) : NPN tf = 45 ns (typ.
) 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 　　+0.
2 2.
8 -0.
3 　　+0.
2 1.
6 -0.
1 Unit: mm 0.
4±0.
1 15 2 4 3 　　　+0.
1 0.
16 -0.
06 　　+0.
2 1.
1 -0.
1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltag...


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