Dual ultrafast power diode
Description
TO-247
BYQ72EW-200
Dual ultrafast power diode
14 May 2015
Product data sheet
1.
General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2.
Features and benefits
• Very low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling performance • Low thermal resistance
3.
Applications
Output rectifiers in high-frequency switched-mode power supplies
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.
5; Tmb ≤ 113 °C; square-wave pulse; per diode; Fig.
1; Fig.
2; Fig.
3
Static characteristics
VF
forward voltage
IF = 15 A; Tj = 150 °C; Fig.
6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig.
7
Min Typ Max Unit - - 200 V - - 15 A
- 0.
78 0.
9 V - 18 25 ns
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5.
Pinning information
Table 2.
Pinning information Pin Symbol Description 1 A1 anode 1 2 K cathode 3 A2 anode 2
BYQ72EW-200
Dual ultrafast power diode
Simplified outline
Graphic symbol
A1 A2
K
sym125
123
TO-247 (SOT429)
6.
Ordering information
Table 3.
Ordering information
Type number
Package
Name
BYQ72EW-200
TO-247
Description
Version
plastic single-ended through-hole package; heatsink mounted; 1 SOT429 mounting hole; 3 lead TO-247
7.
Marking
Table 4.
Marking codes Type number BYQ72EW-200
Marking code BYQ72EW-200
BYQ72EW-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.
V.
2015.
All rights reserved
2 / 11
NXP Semiconductors
BYQ72EW-200
Dual ultrafast power diode
8.
Limiting values
Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repe...
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