60V N-Channel MOSFET
Description
PPJT138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 200mA
Features
RDS(ON) , VGS@10V, ID@200mA<4.
2Ω RDS(ON) , VGS@4.
5V, ID@100mA<5Ω RDS(ON) , VGS@2.
5V, ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-363 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx.
Weight : 0.
0002 ounces, 0.
006 grams Marking: T8L
SOT-363
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current
Power Dissipation
TA=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 60 +20 200
1000 350 2.
8 -55~150
357
UNITS V V mA mA
mW mW/ oC
oC
oC/W
March 27,2015-REV.
01
Page 1
PPJT138L
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current
SYMBOL
BVDSS VGS(th)
RDS(on)
IDSS IGSS
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
IS
TEST CONDITION
VGS=0V,ID=250uA VDS=VGS, ID=250uA VGS=10V,ID=200mA VGS=4.
5V,ID=100mA VGS=2.
5V,ID=50mA VGS=1.
8V,ID=10mA VDS=60V,VGS=0V VGS=+20V,VDS=0V
VDS=15V, ID=200mA, VGS=4.
5V (Note 1,2)
VDS=15V, VGS=0V, f=1.
0MHZ
VDD=10V, ID=200mA, VGS=10V, RG=6Ω (Note 1,2)
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Diode Forward V...
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