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1SS374

Part Number	1SS374
Manufacturer	Toshiba Semiconductor
Description	Silicon Epitaxial Schottky Barrie Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application 1SS374 Unit: mm z Small ...
Datasheet	1SS374 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application 1SS374 Unit: mm z Small package z Low forward voltage: VF (2) = 0.
23V (typ.
) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 150 mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.
g.
the application of high t...

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